AUGER RECOMBINATION IN QUANTUM-WELL INGAAS

被引：11

作者：

HAUG, A

机构：

[1] Max-Planck-Institut für Festkörperforschung, Stuttgart, Heisenbergstr1

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 17期

关键词：

Auger recombination; Quantum wells; Semiconductor lasers;

D O I：

10.1049/el:19900909

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The application of a realistic band structure shows that phonon-assisted Auger recombination with its weak temperature dependence dominates in quantum well semiconductors, a result in contast to bulk materials. The experimental result where the Auger coefficient of quantum well InGaAs is nearly temperature independent is explained. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1415 / 1416

页数：2

共 10 条

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[2] ELECTRONIC STATES IN SEMICONDUCTOR HETEROSTRUCTURES
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FUCHS, G
HANGLEITER, A
STREUBEL, K
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (10) : 913 - 915
[6] AUGER EFFECTS IN ACCEPTOR-DOPED LONG-WAVELENGTH STRAINED QUANTUM WELL LASERS
SUEMUNE, I
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (25) : 2579 - 2581
[7] BAND-TO-BAND AUGER RECOMBINATION EFFECT ON INGAASP LASER THRESHOLD
SUGIMURA, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 627 - 635
[8] GREEN-FUNCTION FORMALISM OF BAND-TO-BAND AUGER RECOMBINATION IN SEMICONDUCTORS - CORRELATION EFFECT
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[J]. PHYSICAL REVIEW B, 1982, 26 (02): : 917 - 930
[9] Taylor R. I., 1985, IEE Proceedings J (Optoelectronics), V132, P364, DOI 10.1049/ip-j.1985.0069
[10] ZIELINSKI EO, 1989, THESIS U STUTTGART

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