BAND-TO-BAND AUGER RECOMBINATION EFFECT ON INGAASP LASER THRESHOLD

被引：137

作者：

SUGIMURA, A

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 05期

关键词：

D O I：

10.1109/JQE.1981.1071190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：627 / 635

页数：9

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[1] THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION
ADAMS, AR
ASADA, M
SUEMATSU, Y
ARAI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L621 - L624
[2] GAIN-FREQUENCY-CURRENT RELATION FOR PB1-X SNX TE DOUBLE HETEROSTRUCTURE LASERS
ANDERSON, WW
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (07) : 532 - 543
[3] [Anonymous], 1966, SEMICONDUCTORS SEMIM
[4] 1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY
ARAI, S
SUEMATSU, Y
ITAYA, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 197 - 205
[5] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION
BEATTIE, AR
SMITH, G
[J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 577 - &
[6] BEROLO O, 1972, 11TH P INT C PHYS SE, P1420
[7] Bogatov A. P., 1975, Soviet Journal of Quantum Electronics, V4, DOI 10.1070/QE1975v004n10ABEH011746
[8] COULOMB EFFECTS ON GAIN SPECTRUM OF SEMICONDUCTORS
BRINKMAN, WF
LEE, PA
[J]. PHYSICAL REVIEW LETTERS, 1973, 31 (04) : 237 - 240
[9] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
STERN, F
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643
[10] BACKGROUND CARRIER CONCENTRATION AND ELECTRON-MOBILITY IN LPE IN1-XGAXASYP1-Y LAYERS
GREENE, PD
WHEELER, SA
ADAMS, AR
ELSABBAHY, AN
AHMAD, CN
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 78 - 80

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