1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY

[1] 1.1 GB-S PSEUDORANDOM PULSE-CODE-MODULATION OF 1.27 MU-M WAVELENGTH CW INGAASP-INP DH LASERS [J]. ELECTRONICS LETTERS, 1978, 14 (11) : 349 - 350

[2] IN0.53GA0.47AS-IN1-XGAXASYP1-Y DOUBLE HETEROSTRUCTURE LASERS WITH EMISSION WAVELENGTH OF 1.67MU-M AT ROOM-TEMPERATURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (10) : 1899 - 1900

[3] ALFEROV ZI, 1977, PISMA ZH TEKH FIZ, V3, P1169

[4] 1.67-MU-M GA0.47IN0.53AS-INP DH LASERS DOUBLE CLADDED WITH INP BY LPE TECHNIQUE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (03) : 709 - 710

[5] CONDITIONS OF LPE GROWTH FOR LATTICE MATCHED GAINASP-INP DH LASERS WITH (100) SUBSTRATE IN RANGE OF 1.2-1.5-MU-M [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) : 2067 - 2068

[6] BOGATOV AP, 1975, SOV PHYS SEMICOND+, V9, P1282

[7] ARSENIC AND GALLIUM DISTRIBUTION COEFFICIENTS IN LIQUID-PHASE EPITAXIAL GAXIN1-XPYAS1-Y [J]. APPLIED PHYSICS LETTERS, 1978, 32 (06) : 388 - 390

[8] DOI A, 1979, APPL PHYS LETT, V34, P393, DOI 10.1063/1.90808

[9] CONTINUOUS 300-DEGREES-K LASER OPERATION OF SINGLE-QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE DIODES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (04) : 265 - 267

[10] INFLUENCE OF LPE GROWTH TECHNIQUES ON THE ALLOY COMPOSITION OF INGAASP [J]. APPLIED PHYSICS LETTERS, 1979, 34 (04) : 292 - 295

[1] 1.1 GB-S PSEUDORANDOM PULSE-CODE-MODULATION OF 1.27 MU-M WAVELENGTH CW INGAASP-INP DH LASERS [J]. ELECTRONICS LETTERS, 1978, 14 (11) : 349 - 350

[2] IN0.53GA0.47AS-IN1-XGAXASYP1-Y DOUBLE HETEROSTRUCTURE LASERS WITH EMISSION WAVELENGTH OF 1.67MU-M AT ROOM-TEMPERATURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (10) : 1899 - 1900

[3] ALFEROV ZI, 1977, PISMA ZH TEKH FIZ, V3, P1169

[4] 1.67-MU-M GA0.47IN0.53AS-INP DH LASERS DOUBLE CLADDED WITH INP BY LPE TECHNIQUE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (03) : 709 - 710

[5] CONDITIONS OF LPE GROWTH FOR LATTICE MATCHED GAINASP-INP DH LASERS WITH (100) SUBSTRATE IN RANGE OF 1.2-1.5-MU-M [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) : 2067 - 2068

[6] BOGATOV AP, 1975, SOV PHYS SEMICOND+, V9, P1282

[7] ARSENIC AND GALLIUM DISTRIBUTION COEFFICIENTS IN LIQUID-PHASE EPITAXIAL GAXIN1-XPYAS1-Y [J]. APPLIED PHYSICS LETTERS, 1978, 32 (06) : 388 - 390

[8] DOI A, 1979, APPL PHYS LETT, V34, P393, DOI 10.1063/1.90808

[9] CONTINUOUS 300-DEGREES-K LASER OPERATION OF SINGLE-QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE DIODES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (04) : 265 - 267

[10] INFLUENCE OF LPE GROWTH TECHNIQUES ON THE ALLOY COMPOSITION OF INGAASP [J]. APPLIED PHYSICS LETTERS, 1979, 34 (04) : 292 - 295