INFLUENCE OF LPE GROWTH TECHNIQUES ON THE ALLOY COMPOSITION OF INGAASP

被引：29

作者：

FENG, M ^{[1
]}

COOK, LW ^{[1
]}

TASHIMA, MM ^{[1
]}

WINDHORN, TH ^{[1
]}

STILLMAN, GE ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 04期

关键词：

D O I：

10.1063/1.90764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In experiments on the LPE growth of InGaAsP on (100) -InP substrates, it has been found that constant-composition epitaxial layers can be grown at constant temperature using the step-cooling technique, while the equilibrium-cooling, supercooling, and two-phase-solution techniques which involve growth under changing temperatures all result in grading of the alloy composition. The lattice constants and energy gaps of epitaxial layers grown using the step-cooling technique are independent of the amount of step cooling but are dependent on the growth temperature.

引用

页码：292 / 295

页数：4

共 27 条

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