INCORPORATION OF GA DURING LPE GROWTH OF IN0.53GA0.47AS ON (111)B AND (100) INP SUBSTRATES

被引：13

作者：

ANTYPAS, GA

HOUNG, YM

HYDER, SB

ESCHER, JS

GREGORY, PE

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 05期

关键词：

D O I：

10.1063/1.90380

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：463 / 465

页数：3

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共 7 条

[1] ANTYPAS GA, 1972, GALLIUM ARSENIDE REL, P48
[2] ANTYPAS GA, 1976, GALLIUM ARSENIDE REL, P96
[3] LIQUID-PHASE-EPITAXIAL GROWTH OF LATTICE-MATCHED IN0.53GA0.47AS ON (100)-ORIENTED INP
HYDER, SB
ANTYPAS, GA
ESCHER, JS
GREGORY, PE
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 551 - 553
[4] GROWTH OF GAXIN1-XAS ON (100) INP BY LIQUID-PHASE EPITAXY
PEARSALL, TP
BISARO, R
ANSEL, R
MERENDA, P
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 497 - 499
[5] PEARSALL TP, 1977, APPL PHYS, V48, P4407
[6] PEARSALL TP, 1978, ELECTRON MATER, V7, P133
[7] GROWTH AND CHARACTERIZATION OF INGAASP-INP LATTICE-MATCHED HETEROJUNCTIONS
SANKARAN, R
ANTYPAS, GA
MOON, RL
ESCHER, JS
JAMES, LW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 932 - 937