1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY

[11] LIQUID-PHASE EPITAXIAL-GROWTH OF LATTICE-MATCHED INGAASP ON (100)-INP FOR 1.15-1.31-MU-M SPECTRAL REGION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 758 - 761

[12] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 150 - &

[13] DIELECTRIC-CONSTANT STEP OF INP-IN1-XGAXASYP1-Y DH LASERS [J]. ELECTRONICS LETTERS, 1978, 14 (24) : 796 - 797

[14] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 310 - 312

[15] TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) : 809 - 815

[16] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (05) : 283 - 285

[17] HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7

[18] MEASURED COMPOSITIONS AND LASER-EMISSION WAVELENGTHS OF GAXIN1-XASYP1-Y LPE LAYERS LATTICE-MATCHED TO INP SUBSTRATES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) : 31 - 37

[19] HSIEH JJ, 1977, 6TH P INT S GALL ARS, V336, P37

[20] Ikeda K., 1978, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE61, P136

[11] LIQUID-PHASE EPITAXIAL-GROWTH OF LATTICE-MATCHED INGAASP ON (100)-INP FOR 1.15-1.31-MU-M SPECTRAL REGION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 758 - 761

[12] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 150 - &

[13] DIELECTRIC-CONSTANT STEP OF INP-IN1-XGAXASYP1-Y DH LASERS [J]. ELECTRONICS LETTERS, 1978, 14 (24) : 796 - 797

[14] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS [J]. ELECTRONICS LETTERS, 1976, 12 (12) : 310 - 312

[15] TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) : 809 - 815

[16] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (05) : 283 - 285

[17] HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7

[18] MEASURED COMPOSITIONS AND LASER-EMISSION WAVELENGTHS OF GAXIN1-XASYP1-Y LPE LAYERS LATTICE-MATCHED TO INP SUBSTRATES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) : 31 - 37

[19] HSIEH JJ, 1977, 6TH P INT S GALL ARS, V336, P37

[20] Ikeda K., 1978, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE61, P136