1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY

被引：65

作者：

ARAI, S

SUEMATSU, Y

ITAYA, Y

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1980年 / 16卷 / 02期

关键词：

D O I：

10.1109/JQE.1980.1070434

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：197 / 205

页数：9

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[21] CARRIER LIFETIME MEASUREMENT OF GAINASP/INP DOUBLE-HETEROSTRUCTURE LASERS
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[22] LOW THRESHOLD CURRENT-DENSITY (100) GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR WAVELENGTH 1.3-MU-M
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[25] ROOM-TEMPERATURE OPERATION OF LATTICE-MATCHED INP-GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MBE
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[26] ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M
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[J]. ELECTRONICS LETTERS, 1979, 15 (04) : 106 - 108
[27] BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (03) : 635 - 644
[28] CRACK FORMATION IN INP-GAXIN1-XAS-INP DOUBLE-HETEROSTRUCTURE FABRICATION
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[J]. APPLIED PHYSICS LETTERS, 1976, 29 (11) : 740 - 741
[29] INP-GAXIN1-XASYP1-Y DOUBLE HETEROSTRUCTURE FOR 1.5 MUM WAVELENGTH
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[J]. APPLIED PHYSICS LETTERS, 1978, 32 (04) : 234 - 236
[30] BAND-GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARDS LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INP
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 659 - 661

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