1.1 GB-S PSEUDORANDOM PULSE-CODE-MODULATION OF 1.27 MU-M WAVELENGTH CW INGAASP-INP DH LASERS

被引：9

作者：

ABBOTT, SM

MUSKA, WM

LEE, TP

DENTAI, AG

BURRUS, CA

机构：

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 11期

关键词：

D O I：

10.1049/el:19780235

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：349 / 350

页数：2

共 9 条

[1] DIRECT MODULATION OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J].

AKIBA, S ;

SAKAI, K ;

YAMAMOTO, T .

ELECTRONICS LETTERS, 1978, 14 (06) :197-198

[2]

BAACK C, 1977, ELECTRON LETT, V13, P453

[3] SMALL-AREA, HIGH-RADIANCE CW INGAASP LEDS EMITTING AT 1.2 TO 1.3 MUM [J].

DENTAI, AG ;

LEE, TP ;

BURRUS, CA ;

BUEHLER, E .

ELECTRONICS LETTERS, 1977, 13 (16) :484-485

[4] CONTINUOUS OPERATION OF GAAS JUNCTION LASERS ON DIAMOND HEAT SINKS AT 200 DEGREES K [J].

DYMENT, JC ;

DASARO, LA .

APPLIED PHYSICS LETTERS, 1967, 11 (09) :292-&

[5] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ ;

ROSSI, JA ;

DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1976, 28 (12) :709-711

[6]

LEE TK, UNPUBLISHED

[7] MATERIAL-DISPERSION-LIMITED OPERATION OF HIGH-BIT-RATE OPTICAL-FIBRE DATA LINKS USING LEDS [J].

MUSKA, WM ;

LI, T ;

LEE, TP ;

DENTAI, AG .

ELECTRONICS LETTERS, 1977, 13 (20) :605-607

[8] DIRECT MODULATION OF DH GAALAS LASERS WITH GAAS MESFETS [J].

OSTOICH, V ;

JEPPESEN, P ;

SLAYMAKER, N .

ELECTRONICS LETTERS, 1975, 11 (21) :515-516

[9] IN1-XGAXASYP1-Y-INP DH LASERS FABRICATED ON INP (100) SUBSTRATES [J].

YAMAMOTO, T ;

SAKAI, K ;

AKIBA, S ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) :95-98

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