THEORETICAL MODELING OF HETEROEPITAXIAL GROWTH INITIATION

被引：4

作者：

KAXIRAS, E

ALERHAND, OL

WANG, J

JOANNOPOULOS, JD

机构：

[1] BELL COMMUN RES INC, RED BANK, NJ 07701 USA

[2] HARVARD UNIV, DIV APPL SCI, CAMBRIDGE, MA 02138 USA

[3] MIT, DEPT PHYS, CAMBRIDGE, MA 02139 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 14卷 / 03期

关键词：

D O I：

10.1016/0921-5107(92)90306-T

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We review recent theoretical investigations on the initiation of heteroepitaxial growth. The thermodynamic premises on which the various growth models are based are considered. A qualitatively new model which applies to polar-on-nonpolar heteroepitaxial growth is discussed. Specific consequences of the new growth model are explored and shown to be consistent with experimental observations of GaAs growth on Si(100) vicinal surfaces. First-principles calculations of the total energy of competing structures provide support for the proposed model. The total-energy comparisons afford a resolution to a long-standing puzzle concerning the effect of temperature on the orientation of GaAs overlayers on vicinal silicon substrates.

引用

页码：245 / 253

页数：9

共 32 条

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