FORMATION OF THE INTERFACE BETWEEN GAAS AND SI - IMPLICATIONS FOR GAAS-ON-SI HETEROEPITAXY

被引：45

作者：

BRINGANS, RD

OLMSTEAD, MA

UHRBERG, RIG

BACHRACH, RZ

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 07期

关键词：

D O I：

10.1063/1.98386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：523 / 525

页数：3

共 12 条

[1] INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON
BIEGELSEN, DK
PONCE, FA
SMITH, AJ
TRAMONTANA, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1856 - 1859
[2] Bringans R. D., 1987, 18th International Conference on the Physics of Semiconductors, P191
[3] SURFACE BANDS FOR SINGLE-DOMAIN 2X1 RECONSTRUCTED SI(100) AND SI(100)-AS - PHOTOEMISSION RESULTS FOR OFF-AXIS CRYSTALS
BRINGANS, RD
UHRBERG, RIG
OLMSTEAD, MA
BACHRACH, RZ
[J]. PHYSICAL REVIEW B, 1986, 34 (10): : 7447 - 7450
[4] ARSENIC-TERMINATED GE(111) - AN IDEAL 1 X 1 SURFACE
BRINGANS, RD
UHRBERG, RIG
BACHRACH, RZ
NORTHRUP, JE
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (05) : 533 - 536
[5] FAN JCC, 1986, MATERIAL RES SOC S P, V67
[6] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES
FISCHER, R
MORKOC, H
NEUMANN, DA
ZABEL, H
CHOI, C
OTSUKA, N
LONGERBONE, M
ERICKSON, LP
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1640 - 1647
[7] POLAR HETEROJUNCTION INTERFACES
HARRISON, WA
KRAUT, EA
WALDROP, JR
GRANT, RW
[J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4402 - 4410
[8] NUCLEATION OF GAAS ON SI-EXPERIMENTAL EVIDENCE FOR A 3-DIMENSIONAL CRITICAL TRANSITION
HULL, R
FISCHERCOLBRIE, A
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (13) : 851 - 853
[9] OLMSTEAD MA, 1986, PHYS REV B, V34, P6401
[10] ELECTRONIC-STRUCTURE, ATOMIC-STRUCTURE, AND THE PASSIVATED NATURE OF THE ARSENIC-TERMINATED SI(111) SURFACE
UHRBERG, RIG
BRINGANS, RD
OLMSTEAD, MA
BACHRACH, RZ
NORTHRUP, JE
[J]. PHYSICAL REVIEW B, 1987, 35 (08): : 3945 - 3951

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