ARSENIC-TERMINATED GE(111) - AN IDEAL 1 X 1 SURFACE

[1] Appelbaum J.A., 1974, PHYSICS SEMICONDUCTO, P675

[2] ELECTRONIC-STRUCTURE OF GE(111) AND GE(111)-H FROM ANGLE-RESOLVED PHOTOEMISSION MEASUREMENTS [J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1081 - 1089

[3] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582

[4] ELECTRONIC SURFACE-STATES ON RELAXED (111) SURFACE OF GE [J]. PHYSICAL REVIEW B, 1977, 15 (06): : 3236 - 3242

[5] PHOTOEMISSION YIELD SPECTROSCOPY OF ELECTRONIC SURFACE-STATES ON GERMANIUM (111) SURFACES [J]. SURFACE SCIENCE, 1979, 85 (02) : 326 - 334

[6] SEMICONDUCTOR CORE-LEVEL TO VALENCE-BAND MAXIMUM BINDING-ENERGY DIFFERENCES - PRECISE DETERMINATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1965 - 1977

[7] LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) : 729 - &

[8] ATOMIC GEOMETRY AND SURFACE-STATE SPECTRUM FOR GE(111)-(2 X 1) [J]. PHYSICAL REVIEW B, 1983, 27 (10) : 6553 - 6556

[9] NORTHRUP JE, UNPUB

[10] REALISTIC TIGHT-BINDING CALCULATIONS OF SURFACE STATES OF SI AND GE (111) [J]. PHYSICAL REVIEW LETTERS, 1974, 32 (25) : 1433 - 1436

[1] Appelbaum J.A., 1974, PHYSICS SEMICONDUCTO, P675

[2] ELECTRONIC-STRUCTURE OF GE(111) AND GE(111)-H FROM ANGLE-RESOLVED PHOTOEMISSION MEASUREMENTS [J]. PHYSICAL REVIEW B, 1982, 25 (02): : 1081 - 1089

[3] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582

[4] ELECTRONIC SURFACE-STATES ON RELAXED (111) SURFACE OF GE [J]. PHYSICAL REVIEW B, 1977, 15 (06): : 3236 - 3242

[5] PHOTOEMISSION YIELD SPECTROSCOPY OF ELECTRONIC SURFACE-STATES ON GERMANIUM (111) SURFACES [J]. SURFACE SCIENCE, 1979, 85 (02) : 326 - 334

[6] SEMICONDUCTOR CORE-LEVEL TO VALENCE-BAND MAXIMUM BINDING-ENERGY DIFFERENCES - PRECISE DETERMINATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1965 - 1977

[7] LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) : 729 - &

[8] ATOMIC GEOMETRY AND SURFACE-STATE SPECTRUM FOR GE(111)-(2 X 1) [J]. PHYSICAL REVIEW B, 1983, 27 (10) : 6553 - 6556

[9] NORTHRUP JE, UNPUB

[10] REALISTIC TIGHT-BINDING CALCULATIONS OF SURFACE STATES OF SI AND GE (111) [J]. PHYSICAL REVIEW LETTERS, 1974, 32 (25) : 1433 - 1436