PHOTOEMISSION YIELD SPECTROSCOPY OF ELECTRONIC SURFACE-STATES ON GERMANIUM (111) SURFACES

被引：46

作者：

GUICHAR, GM

GARRY, GA

SEBENNE, CA

机构：

[1] Laboratoire de Physique, Solides de.l 'Université P. et M. Curie, Associé au CNRS, F-75230 Paris Cedex 05, 4, Place Jussieu

来源：

SURFACE SCIENCE | 1979年 / 85卷 / 02期

关键词：

D O I：

10.1016/0039-6028(79)90256-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic surface states of cleaved and annealed Ge(111) surfaces have been investigated by photoemission yield spectroscopy and contact potential measurements on a set of differently doped samples. On the 2 × 1 cleaved surface, a surface state band centered about 0.7 eV below the valence band maximum is found. The variations of the work function with the doping level show that an empty surface state band exists above the Fermi level. After annealing at temperatures of the order of 350°C, this surface exhibits a 2 × 8 superstructure. A new surface state band is then found closer to the valence band maximum. This variation of the surface state distribution is correlated to a change in the surface potential. The variation of the electronic characteristics upon oxygen adsorption are also reported and an evaluation of the sticking coefficient is made for both structures. © 1979.

引用

页码：326 / 334

页数：9

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