SURFACE STATES AND SURFACE BONDS OF SI(111)

被引：221

作者：

APPELBAUM, JA ^{[1
]}

HAMANN, DR ^{[1
]}

机构：

[1] BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

PHYSICAL REVIEW LETTERS | 1973年 / 31卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.31.106

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：106 / 109

页数：4

共 19 条

[1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].

ALLEN, FG ;

GOBELI, GW .

PHYSICAL REVIEW, 1962, 127 (01) :150-&

[2] SURFACE BANDS OF SILICON (III) SLABS BY A LCAO METHOD [J].

ALSTRUP, I .

SURFACE SCIENCE, 1970, 20 (02) :335-&

[3] CALCULATION OF SURFACE STATES OF SILICON [J].

ALSTRUP, I .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 45 (01) :209-&

[4] SELF-CONSISTENT ELECTRONIC-STRUCTURE OF SOLID SURFACES [J].

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW B-SOLID STATE, 1972, 6 (06) :2166-+

[5]

APPELBAUM JA, TO BE PUBLISHED

[6] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON [J].

BRUST, D .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A) :1337-&

[7]

CHALVES CM, 1966, SOLID STATE COMMUN, V4, P271

[8]

DAVISSON SG, 1970, SOLID STATE PHYSICS, V25

[9] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].

EASTMAN, DE ;

GROBMAN, WD .

PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1378-&

[10]

FLORIO JE, 1971, SURF SCI, V24, P17

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