ELECTRONIC-STRUCTURE OF GE(111) AND GE(111)-H FROM ANGLE-RESOLVED PHOTOEMISSION MEASUREMENTS

被引：81

作者：

BRINGANS, RD

HOCHST, H

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.25.1081

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：1081 / 1089

页数：9

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