REALISTIC TIGHT-BINDING CALCULATIONS OF SURFACE STATES OF SI AND GE (111)

被引：218

作者：

PANDEY, KC ^{[1
]}

PHILLIPS, JC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1974年 / 32卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.32.1433

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1433 / 1436

页数：4

相关论文

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[1] SURFACE STATES AND SURFACE BONDS OF SI(111)
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[5] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI
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[7] TIGHT-BINDING CALCULATIONS OF SURFACE STATES OF SI(111)
PANDEY, KC
PHILLIPS, JC
[J]. SOLID STATE COMMUNICATIONS, 1974, 14 (06) : 439 - 441
[8] PANDEY KC, UNPUBLISHED
[9] EXCITONIC INSTABILITIES, VACANCIES, AND RECONSTRUCTION OF COVALENT SURFACES
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[J]. SURFACE SCIENCE, 1973, 40 (03) : 459 - 469
[10] NONLOCAL PSEUDOPOTENTIAL FOR GE
PHILLIPS, JC
PANDEY, KC
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