ATOMIC GEOMETRY AND SURFACE-STATE SPECTRUM FOR GE(111)-(2 X 1)

被引：98

作者：

NORTHRUP, JE ^{[1
]}

COHEN, ML ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB, DIV MAT & MOLEC RES, BERKELEY, CA 94720 USA

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.27.6553

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6553 / 6556

页数：4

共 18 条

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[8] SURFACE-STATES IN SI(111)2X1 AND GE(111)2X1 BY OPTICAL REFLECTIVITY
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[9] EXPERIMENTAL DANGLING-BOND BAND ON THE GE(111)-(2X1) SURFACE
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[10] ELECTRONIC-STRUCTURE OF THE PI-BONDED CHAIN MODEL AND THE NON-BUCKLED ANTI-FERROMAGNETIC INSULATOR MODEL FOR THE SI(111) SURFACE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 333 - 336

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