MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES

被引：199

作者：

FISCHER, R

MORKOC, H

NEUMANN, DA

ZABEL, H

CHOI, C

OTSUKA, N

LONGERBONE, M

ERICKSON, LP

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] PURDUE UNIV,DEPT MAT SCI,W LAFAYETTE,IN 47907

[4] PERKIN ELMER,EDEN PRAIRIE,MN 55344

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.337253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1640 / 1647

页数：8

共 16 条

[1] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J].

FISCHER, R ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

KOPP, W ;

MORKOC, H ;

LITTON, CW .

ELECTRONICS LETTERS, 1984, 20 (22) :945-947

[2] LOW THRESHOLD LASER OPERATION AT ROOM-TEMPERATURE IN GAAS/(AL,GA)AS STRUCTURES GROWN DIRECTLY ON (100)SI [J].

FISCHER, R ;

KOPP, W ;

MORKOC, H ;

PION, M ;

SPECHT, A ;

BURKHART, G ;

APPELMAN, H ;

MCGOUGAN, D ;

RICE, R .

APPLIED PHYSICS LETTERS, 1986, 48 (20) :1360-1361

[3] GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY [J].

FISCHER, R ;

MASSELINK, WT ;

KLEM, J ;

HENDERSON, T ;

MCGLINN, TC ;

KLEIN, MV ;

MORKOC, H ;

MAZUR, JH ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :374-381

[4]

Fischer R., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P332

[5] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

FISCHER, R ;

CHAND, N ;

KOPP, W ;

MORKOC, H ;

ERICKSON, LP ;

YOUNGMAN, R .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :397-399

[6] A DC AND MICROWAVE COMPARISON OF GAAS-MESFETS ON GAAS AND SI SUBSTRATES [J].

FISCHER, RJ ;

CHAND, N ;

KOPP, WF ;

PENG, CK ;

MORKOC, H ;

GLEASON, KR ;

SCHEITLIN, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) :206-213

[7] LEED STUDY OF THE STEPPED SURFACE OF VICINAL SI(100) [J].

KAPLAN, R .

SURFACE SCIENCE, 1980, 93 (01) :145-158

[8] DEFECTS IN EPITAXIAL MULTILAYERS .2. DISLOCATION PILE-UPS, THREADING DISLOCATIONS, SLIP LINES AND CRACKS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1975, 29 (03) :273-280

[9] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

METZE, GM ;

CHOI, HK ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1107-1109

[10] STRUCTURAL-PROPERTIES OF GAAS ON SI AND GE SUBSTRATES [J].

NEUMANN, DA ;

ZHU, XM ;

ZABEL, H ;

HENDERSON, T ;

FISCHER, R ;

MASSELINK, WT ;

KLEM, J ;

PENG, CK ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :642-644

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