LOW THRESHOLD LASER OPERATION AT ROOM-TEMPERATURE IN GAAS/(AL,GA)AS STRUCTURES GROWN DIRECTLY ON (100)SI

被引：61

作者：

FISCHER, R ^{[1
]}

KOPP, W ^{[1
]}

MORKOC, H ^{[1
]}

PION, M ^{[1
]}

SPECHT, A ^{[1
]}

BURKHART, G ^{[1
]}

APPELMAN, H ^{[1
]}

MCGOUGAN, D ^{[1
]}

RICE, R ^{[1
]}

机构：

[1] MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 20期

关键词：

D O I：

10.1063/1.96909

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1360 / 1361

页数：2

共 5 条

[1] DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100) [J].

FISCHER, R ;

NEUMAN, D ;

ZABEL, H ;

MORKOC, H ;

CHOI, C ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1986, 48 (18) :1223-1225

[2] STRUCTURAL-PROPERTIES OF GAAS ON SI AND GE SUBSTRATES [J].

NEUMANN, DA ;

ZHU, XM ;

ZABEL, H ;

HENDERSON, T ;

FISCHER, R ;

MASSELINK, WT ;

KLEM, J ;

PENG, CK ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :642-644

[3] ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SAKAI, S ;

SOGA, T ;

TAKEYASU, M ;

UMENO, M .

APPLIED PHYSICS LETTERS, 1986, 48 (06) :413-414

[4] ALGAAS DOUBLE-HETEROSTRUCTURE DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE [J].

WINDHORN, TH ;

METZE, GM ;

TSAUR, BY ;

FAN, JCC .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :309-311

[5] ROOM-TEMPERATURE OPERATION OF GAAS/ALGAAS DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE [J].

WINDHORN, TH ;

METZE, GM .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1031-1033

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