DISLOCATION REDUCTION IN EPITAXIAL GAAS ON SI (100)

被引：158

作者：

FISCHER, R ^{[1
]}

NEUMAN, D ^{[1
]}

ZABEL, H ^{[1
]}

MORKOC, H ^{[1
]}

CHOI, C ^{[1
]}

OTSUKA, N ^{[1
]}

机构：

[1] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 18期

关键词：

D O I：

10.1063/1.96988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1223 / 1225

页数：3

共 12 条

[1] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON
FISCHER, R
HENDERSON, T
KLEM, J
MASSELINK, WT
KOPP, W
MORKOC, H
LITTON, CW
[J]. ELECTRONICS LETTERS, 1984, 20 (22) : 945 - 947
[2] GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY
FISCHER, R
MASSELINK, WT
KLEM, J
HENDERSON, T
MCGLINN, TC
KLEIN, MV
MORKOC, H
MAZUR, JH
WASHBURN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 374 - 381
[3] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
FISCHER, R
CHAND, N
KOPP, W
MORKOC, H
ERICKSON, LP
YOUNGMAN, R
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 397 - 399
[4] FISCHER R, UNPUB
[5] A DC AND MICROWAVE COMPARISON OF GAAS-MESFETS ON GAAS AND SI SUBSTRATES
FISCHER, RJ
CHAND, N
KOPP, WF
PENG, CK
MORKOC, H
GLEASON, KR
SCHEITLIN, D
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) : 206 - 213
[6] DEFECTS IN EPITAXIAL MULTILAYERS .2. DISLOCATION PILE-UPS, THREADING DISLOCATIONS, SLIP LINES AND CRACKS
MATTHEWS, JW
BLAKESLEE, AE
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 29 (03) : 273 - 280
[7] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
METZE, GM
CHOI, HK
TSAUR, BY
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1107 - 1109
[8] NEUMANN DA, 6TH MBE WORKSH
[9] NEUMANN DA, UNPUB J VAC SCI TE B
[10] FABRICATION OF GAAS-MESFET RING OSCILLATOR ON MOCVD GROWN GAAS/SI(100) SUBSTRATE
NONAKA, T
AKIYAMA, M
KAWARADA, Y
KAMINISHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (12): : L919 - L921

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