FABRICATION OF GAAS-MESFET RING OSCILLATOR ON MOCVD GROWN GAAS/SI(100) SUBSTRATE

[1] GROWTH OF VANADIUM-DOPED SEMI-INSULATING GAAS BY MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 39 - 43

[2] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[3] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 207 - 208

[4] HETEROEPITAXY OF GE1-XSIX ON SI BY TRANSIENT HEATING OF GE-COATED SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (11) : 1024 - 1027

[5] FAN JCC, 1984, 16TH C SOL STAT DEV, P115

[6] GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 967 - 969

[7] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 169 - 171

[8] ISHIDA T, 1984, 42ND ANN DEV RES C S

[9] Nakamura H., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P134

[10] GROWTH AND PATTERNING OF GAAS/GE SINGLE-CRYSTAL LAYERS ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 274 - 276

[1] GROWTH OF VANADIUM-DOPED SEMI-INSULATING GAAS BY MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 39 - 43

[2] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11): : L843 - L845

[3] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 207 - 208

[4] HETEROEPITAXY OF GE1-XSIX ON SI BY TRANSIENT HEATING OF GE-COATED SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (11) : 1024 - 1027

[5] FAN JCC, 1984, 16TH C SOL STAT DEV, P115

[6] GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 967 - 969

[7] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 169 - 171

[8] ISHIDA T, 1984, 42ND ANN DEV RES C S

[9] Nakamura H., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P134

[10] GROWTH AND PATTERNING OF GAAS/GE SINGLE-CRYSTAL LAYERS ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 274 - 276