GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD

被引：293

作者：

AKIYAMA, M

KAWARADA, Y

KAMINISHI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1984年 / 23卷 / 11期

关键词：

D O I：

10.1143/JJAP.23.L843

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L843 / L845

页数：3

共 10 条

[1]

AKIYAMA M, 1984, 2ND INT C MOVPE SHEF

[2]

AKIYAMA M, 1984, UNPUB J CRYST GROWTH

[3] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES [J].

CHOI, HK ;

TSAUR, BY ;

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TURNER, GW ;

FAN, JCC .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) :207-208

[4] HETEROEPITAXY OF GE1-XSIX ON SI BY TRANSIENT HEATING OF GE-COATED SI SUBSTRATES [J].

FAN, JCC ;

GALE, RP ;

DAVIS, FM ;

FOLEY, GH .

APPLIED PHYSICS LETTERS, 1980, 37 (11) :1024-1027

[5]

FAN JCC, 1984, 16TH C SOL STAT DEV, P115

[6] GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES [J].

FLETCHER, RM ;

WAGNER, DK ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1984, 44 (10) :967-969

[7] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J].

GALE, RP ;

FAN, JCC ;

TSAUR, BY ;

TURNER, GW ;

DAVIS, FM .

ELECTRON DEVICE LETTERS, 1981, 2 (07) :169-171

[8]

ISHIDA T, 1984, 42ND ANN VEV RES C S

[9] GROWTH AND PATTERNING OF GAAS/GE SINGLE-CRYSTAL LAYERS ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

SHELDON, P ;

JONES, KM ;

HAYES, RE ;

TSAUR, BY ;

FAN, JCC .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :274-276

[10] MOLECULAR-BEAM EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS AND ALGAAS ON SI(100) [J].

WANG, WI .

APPLIED PHYSICS LETTERS, 1984, 44 (12) :1149-1151

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