GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES

被引：65

作者：

FLETCHER, RM

WAGNER, DK

BALLANTYNE, JM

机构：

来源：

关键词：

D O I：

10.1063/1.94613

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：967 / 969

页数：3

共 6 条

[1]

FLETCHER RM, P S THIN FILMS INTER, V2

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[3]

MAENPAA M, 1982, J APPL PHYS, V53, P1076, DOI 10.1063/1.330519

[4] THE HETEROEPITAXY OF GE ON SI(100) BY VACUUM EVAPORATION [J].

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[5] GAAS LIGHT-EMITTING-DIODES FABRICATED ON SIO2/SI WAFERS [J].

SHINODA, Y ;

NISHIOKA, T ;

OHMACHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L450-L451

[6] HETEROEPITAXY OF VACUUM-EVAPORATED GE FILMS ON SINGLE-CRYSTAL SI [J].

TSAUR, BY ;

GEIS, MW ;

FAN, JCC ;

GALE, RP .