HETERO-EPITAXIAL GROWTH OF GE ON (111) SI BY VACUUM EVAPORATION

[1] BEESTON BEP, 1972, PRACTICAL METHODS EL, V1, P271

[2] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 132 - &

[3] STRUCTURAL AND ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE GE FILMS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 48 (01): : 257 - 262

[4] STRUCTURE OF VAPOR-DEPOSITED GE FILMS AS A FUNCTION OF SUBSTRATE-TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7390 - 7396

[5] Fan J. C. C., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P1102

[6] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 169 - 171

[7] EPITAXIAL GROWTH OF GE LAYERS ON SI SUBSTRATES BY VACUUM EVAPORATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (08) : 821 - +

[8] Epitaxial Growth Behavior of Ge on Si {111} Surfaces [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (04): : 907 - 911

[9] EPITAXIAL DEPOSITION OF GERMANIUM BY BOTH SPUTTERING AND EVAPORATION [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) : 3665 - +

[10] EPITAXIAL-GROWTH OF GE ON LESS-THAN-100 GREATER-THAN SI BY A SIMPLE CHEMICAL VAPOR-DEPOSITION TECHNIQUE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 245 - 247

[1] BEESTON BEP, 1972, PRACTICAL METHODS EL, V1, P271

[2] EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 132 - &

[3] STRUCTURAL AND ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE GE FILMS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 48 (01): : 257 - 262

[4] STRUCTURE OF VAPOR-DEPOSITED GE FILMS AS A FUNCTION OF SUBSTRATE-TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7390 - 7396

[5] Fan J. C. C., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P1102

[6] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 169 - 171

[7] EPITAXIAL GROWTH OF GE LAYERS ON SI SUBSTRATES BY VACUUM EVAPORATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (08) : 821 - +

[8] Epitaxial Growth Behavior of Ge on Si {111} Surfaces [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (04): : 907 - 911

[9] EPITAXIAL DEPOSITION OF GERMANIUM BY BOTH SPUTTERING AND EVAPORATION [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) : 3665 - +

[10] EPITAXIAL-GROWTH OF GE ON LESS-THAN-100 GREATER-THAN SI BY A SIMPLE CHEMICAL VAPOR-DEPOSITION TECHNIQUE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 245 - 247