EPITAXIAL GROWTH OF GE LAYERS ON SI SUBSTRATES BY VACUUM EVAPORATION

被引：11

作者：

ITO, K

TAKAHASHI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 08期

关键词：

D O I：

10.1143/JJAP.7.821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：821 / +

页数：1

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[1] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[2] PHOTOVOLTAIC CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS
DONNELLY, JP
MILNES, AG
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 20 (04) : 295 - &
[3] ONE-DIMENSIONAL DISLOCATIONS .1. STATIC THEORY
FRANK, FC
VANDERMERWE, JH
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 205 - 216
[4] ORIENTED GROWTH OF SEMICONDUCTORS .I. ORIENTATIONS IN GALLIUM ARSENIDE GROWN EPITAXIALLY ON GERMANIUM
HOLLOWAY, H
WOLLMANN, K
JOSEPH, AS
[J]. PHILOSOPHICAL MAGAZINE, 1965, 11 (110): : 263 - &
[5] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON
LANDER, JJ
MORRISON, J
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) : 2089 - &
[6] THE OBSERVATION OF DISLOCATIONS TO ACCOMMODATE THE MISFIT BETWEEN CRYSTALS WITH DIFFERENT LATTICE PARAMETERS
MATTHEWS, JW
[J]. PHILOSOPHICAL MAGAZINE, 1961, 6 (71): : 1347 - &
[7] NUCLEATION GROWTH STRUCTURE AND EPITAXY OF THIN SURFACE FILMS
PASHLEY, DW
[J]. ADVANCES IN PHYSICS, 1965, 14 (55) : 327 - +
[8] ELECTRICAL TRANSPORT IN NGE-PGAAS HETEROJUNCTIONS
RIBEN, AR
FEUCHT, DL
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1966, 20 (06) : 583 - &