EPITAXIAL-GROWTH OF GE ON LESS-THAN-100 GREATER-THAN SI BY A SIMPLE CHEMICAL VAPOR-DEPOSITION TECHNIQUE

被引：46

作者：

KUECH, TF ^{[1
]}

MAENPAA, M ^{[1
]}

LAU, SS ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,LA JOLLA,CA 92093

来源：

关键词：

D O I：

10.1063/1.92695

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：245 / 247

页数：3

共 7 条

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[2] SILICON-GERMANIUM N-P HETEROJUNCTION
HAMPSHIRE, MJ
WRIGHT, GT
[J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1964, 15 (11): : 1331 - &
[3] MAENPAA M, UNPUBLISHED
[4] MILNES AG, 1972, HETEROJUNCTIONS META, pCH4
[5] SZE SM, 1967, PHYSICS SEMICONDUCTO, P40
[6] SOLID-PHASE HETEROEPITAXY OF GE ON (100)SI
TSAUR, BY
FAN, JCC
GALE, RP
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 176 - 179
[7] PASSIVITY DURING THE OXIDATION OF SILICON AT ELEVATED TEMPERATURES
WAGNER, C
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (09) : 1295 - 1297