SOLID-PHASE HETEROEPITAXY OF GE ON (100)SI

被引：24

作者：

TSAUR, BY

FAN, JCC

GALE, RP

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 03期

关键词：

D O I：

10.1063/1.92292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：176 / 179

页数：4

共 14 条

[1] EVIDENCE FOR VOID INTERCONNECTION IN EVAPORATED AMORPHOUS-SILICON FROM EPITAXIAL CRYSTALLIZATION MEASUREMENTS [J].

BEAN, JC ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :59-61

[2]

BOZLER CO, 1979, 7TH INT S GAAS REL C, P429

[3] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS [J].

CSEPREGI, L ;

KULLEN, RP ;

MAYER, JW ;

SIGMON, TW .

SOLID STATE COMMUNICATIONS, 1977, 21 (11) :1019-1021

[4]

Fan J. C. C., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P1102

[5] HETEROEPITAXY OF GE1-XSIX ON SI BY TRANSIENT HEATING OF GE-COATED SI SUBSTRATES [J].

FAN, JCC ;

GALE, RP ;

DAVIS, FM ;

FOLEY, GH .

APPLIED PHYSICS LETTERS, 1980, 37 (11) :1024-1027

[6]

FAN JCC, 1979, APPL PHYS LETT, V35, P875, DOI 10.1063/1.90990

[7] HETEROEPITAXY OF A DEPOSITED AMORPHOUS-GERMANIUM LAYER ON A SILICON SUBSTRATE BY LASER ANNEALING [J].

GOLECKI, I ;

KENNEDY, EF ;

LAU, SS ;

MAYER, JW ;

TSENG, WF ;

ECKARDT, RC ;

WAGNER, RJ .

THIN SOLID FILMS, 1979, 57 (01) :L13-L15

[8]

HUNG LS, COMMUNICATION

[9]

LAU SS, 1978, APPL PHYS LETT, V33, P235, DOI 10.1063/1.90310

[10] REGROWTH OF AMORPHOUS FILMS [J].

LAU, SS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (05) :1656-1661

← 1 2 →