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SOLID-PHASE HETEROEPITAXY OF GE ON (100)SI
被引:24
作者
:
TSAUR, BY
论文数:
0
引用数:
0
h-index:
0
TSAUR, BY
FAN, JCC
论文数:
0
引用数:
0
h-index:
0
FAN, JCC
GALE, RP
论文数:
0
引用数:
0
h-index:
0
GALE, RP
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1981年
/ 38卷
/ 03期
关键词
:
D O I
:
10.1063/1.92292
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:176 / 179
页数:4
相关论文
共 14 条
[11]
LEAMY HJ, 1980, LASER ELECTRON BEAM, P581
[12]
SILICON EPITAXY BY SOLID-PHASE CRYSTALLIZATION OF DEPOSITED AMORPHOUS FILMS
[J].
ROTH, JA
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
ROTH, JA
;
ANDERSON, CL
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
ANDERSON, CL
.
APPLIED PHYSICS LETTERS,
1977,
31
(10)
:689
-691
[13]
SOLID-STATE EPITAXIAL-GROWTH OF DEPOSITED SI FILMS
[J].
VONALLMEN, M
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
USN,RES LAB,WASHINGTON,DC 20375
VONALLMEN, M
;
LAU, SS
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
USN,RES LAB,WASHINGTON,DC 20375
LAU, SS
;
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
USN,RES LAB,WASHINGTON,DC 20375
MAYER, JW
;
TSENG, WF
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
USN,RES LAB,WASHINGTON,DC 20375
TSENG, WF
.
APPLIED PHYSICS LETTERS,
1979,
35
(03)
:280
-282
[14]
CRYSTALLIZATION IN AMORPHOUS-SILICON
[J].
ZELLAMA, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
ZELLAMA, K
;
GERMAIN, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
GERMAIN, P
;
SQUELARD, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
SQUELARD, S
;
BOURGOIN, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
BOURGOIN, JC
;
THOMAS, PA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
THOMAS, PA
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(11)
:6995
-7000
←
1
2
→
共 14 条
[11]
LEAMY HJ, 1980, LASER ELECTRON BEAM, P581
[12]
SILICON EPITAXY BY SOLID-PHASE CRYSTALLIZATION OF DEPOSITED AMORPHOUS FILMS
[J].
ROTH, JA
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
ROTH, JA
;
ANDERSON, CL
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HUGHES RES LABS,MALIBU,CA 90265
ANDERSON, CL
.
APPLIED PHYSICS LETTERS,
1977,
31
(10)
:689
-691
[13]
SOLID-STATE EPITAXIAL-GROWTH OF DEPOSITED SI FILMS
[J].
VONALLMEN, M
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
USN,RES LAB,WASHINGTON,DC 20375
VONALLMEN, M
;
LAU, SS
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
USN,RES LAB,WASHINGTON,DC 20375
LAU, SS
;
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
USN,RES LAB,WASHINGTON,DC 20375
MAYER, JW
;
TSENG, WF
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
USN,RES LAB,WASHINGTON,DC 20375
TSENG, WF
.
APPLIED PHYSICS LETTERS,
1979,
35
(03)
:280
-282
[14]
CRYSTALLIZATION IN AMORPHOUS-SILICON
[J].
ZELLAMA, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
ZELLAMA, K
;
GERMAIN, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
GERMAIN, P
;
SQUELARD, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
SQUELARD, S
;
BOURGOIN, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
BOURGOIN, JC
;
THOMAS, PA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE
THOMAS, PA
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(11)
:6995
-7000
←
1
2
→