CRYSTALLIZATION IN AMORPHOUS-SILICON

被引：170

作者：

ZELLAMA, K ^{[1
]}

GERMAIN, P ^{[1
]}

SQUELARD, S ^{[1
]}

BOURGOIN, JC ^{[1
]}

THOMAS, PA ^{[1
]}

机构：

[1] UNIV PARIS 7,PHYS SOLIDES LAB,F-75221 PARIS 05,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 11期

关键词：

D O I：

10.1063/1.325856

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Crystallization has been studied in amorphous silicon layers produced by evaporation. The crystalline fraction is deduced from conductivity measurements. Depending upon the conditions of evaporation homogeneous or heterogeneous nucleation is observed and the crystallization is induced at the surface or in the bulk. The variations with temperature of the growth rate of crystallization and of the nucleation rate are obtained from the kinetics of the crystallization measured at various temperatures. The results allow one to provide orders of magnitude for the thermodynamical parameters which characterize the crystallization.

引用

页码：6995 / 7000

页数：6

共 12 条

[1] Blum N. A., 1972, Journal of Non-Crystalline Solids, V11, P242, DOI 10.1016/0022-3093(72)90006-3
[2] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS
BRODSKY, MH
TITLE, RS
WEISER, K
PETTIT, GD
[J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &
[3] Connell G., 1972, J NON-CRYST SOLIDS, V8, P215
[4] CRYSTALLIZATION OF AMORPHOUS SILICON FILMS BY ND-YAG LASER-HEATING
FAN, JCC
ZEIGER, HJ
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 224 - 226
[5] CRYSTALLIZATION IN AMORPHOUS-GERMANIUM
GERMAIN, P
ZELLAMA, K
SQUELARD, S
BOURGOIN, JC
GHEORGHIU, A
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6986 - 6994
[6] ELECTRICAL-CONDUCTIVITY AND CRYSTALLIZATION IN AMORPHOUS-GERMANIUM
GERMAIN, P
SQUELARD, S
BOURGOIN, JC
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1977, 23 (01) : 93 - 98
[7] GERMAIN P, 1977, J APPL PHYS, V48, P5
[8] HIGH-TEMPERATURE METAL-INDUCED CRYSTALLIZATION OF RF SPUTTERED AMORPHOUS SI THIN-FILMS
GREENE, JE
MEI, L
[J]. THIN SOLID FILMS, 1976, 37 (03) : 429 - 440
[9] HERD SR, 1972, J NONCRYSTAL SOLIDS, V7, P309, DOI DOI 10.1016/0022-3093(72)90267-0
[10] NAGASIMA N, 1977, J VAC SCI TECHNOL, V14, P54, DOI 10.1116/1.569304

← 1 2 →