HIGH-TEMPERATURE METAL-INDUCED CRYSTALLIZATION OF RF SPUTTERED AMORPHOUS SI THIN-FILMS

被引：17

作者：

GREENE, JE

MEI, L

机构：

[1] UNIV ILLINOIS,DEPT MET,URBANA,IL 61801

[2] UNIV ILLINOIS,COORD SCI LAB,URBANA,IL 61801

来源：

关键词：

D O I：

10.1016/0040-6090(76)90611-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：429 / 440

页数：12

共 11 条

[1] Barna A., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P109
[2] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS
BRODSKY, MH
TITLE, RS
WEISER, K
PETTIT, GD
[J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &
[3] STRUCTURAL, ELECTRICAL, AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM FILMS
CHOPRA, KL
BAHL, SK
[J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2545 - &
[4] HIGH-RESOLUTION ELECTRON MICROSCOPE OBSERVATION OF VOIDS IN AMORPHOUS GE
DONOVAN, TM
HEINEMAN.K
[J]. PHYSICAL REVIEW LETTERS, 1971, 27 (26) : 1794 - &
[5] Fuhs W., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P79
[6] METAL-INDUCED CRYSTALLIZATION OF RF SPUTTERED A-SI THIN-FILMS
GREENE, JE
MEI, L
[J]. THIN SOLID FILMS, 1976, 34 (01) : 27 - 30
[7] HERD SR, 1972, J NONCRYSTAL SOLIDS, V7, P309, DOI DOI 10.1016/0022-3093(72)90267-0
[8] RF-SPUTTERED AMORPHOUS SI-CRYSTALLINE SI JUNCTIONS
MEI, L
GREENE, JE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 145 - 148
[9] CRYSTALLIZATION OF GE AND SI IN METAL-FILMS .1.
OTTAVIAN.G
SIGURD, D
MARRELLO, V
MAYER, JW
MCCALDIN, JO
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1730 - 1739
[10] NUCLEATION AND GROWTH OF THIN FILMS AS OBSERVED IN ELECTRON MICROSCOPE
PASHLEY, DW
STOWELL, MJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1966, 3 (03): : 156 - &