HETEROEPITAXY OF GE1-XSIX ON SI BY TRANSIENT HEATING OF GE-COATED SI SUBSTRATES

[1] BLUM NA, 1976, J NON-CRYST SOLIDS, V22, P29, DOI 10.1016/0022-3093(76)90004-1

[2] BOZLER CO, 1979, 7TH INT S GAAS REL C, P429

[3] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) : 3021 - &

[4] Fan J. C. C., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P1102

[5] FAN JCC, 1979, APPL PHYS LETT, V35, P875, DOI 10.1063/1.90990

[6] SOLID-PHASE GROWTH OF LARGE ALIGNED GRAINS DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS ON FUSED-SILICA [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 158 - 161

[7] HETEROEPITAXY OF A DEPOSITED AMORPHOUS-GERMANIUM LAYER ON A SILICON SUBSTRATE BY LASER ANNEALING [J]. THIN SOLID FILMS, 1979, 57 (01) : L13 - L15

[8] LAU SS, 1978, APPL PHYS LETT, V33, P235, DOI 10.1063/1.90310

[9] LAU SS, 1978, THIN FILMS INTERDIFF, pCH12

[10] LEAMY HJ, 1980, LASER ELECTRON BEAM, P581

[1] BLUM NA, 1976, J NON-CRYST SOLIDS, V22, P29, DOI 10.1016/0022-3093(76)90004-1

[2] BOZLER CO, 1979, 7TH INT S GAAS REL C, P429

[3] LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) : 3021 - &

[4] Fan J. C. C., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P1102

[5] FAN JCC, 1979, APPL PHYS LETT, V35, P875, DOI 10.1063/1.90990

[6] SOLID-PHASE GROWTH OF LARGE ALIGNED GRAINS DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS ON FUSED-SILICA [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 158 - 161

[7] HETEROEPITAXY OF A DEPOSITED AMORPHOUS-GERMANIUM LAYER ON A SILICON SUBSTRATE BY LASER ANNEALING [J]. THIN SOLID FILMS, 1979, 57 (01) : L13 - L15

[8] LAU SS, 1978, APPL PHYS LETT, V33, P235, DOI 10.1063/1.90310

[9] LAU SS, 1978, THIN FILMS INTERDIFF, pCH12

[10] LEAMY HJ, 1980, LASER ELECTRON BEAM, P581