PASSIVITY DURING THE OXIDATION OF SILICON AT ELEVATED TEMPERATURES

[1] DIFFERENTIAL THERMAL ANALYSIS OF THE SI-SIO2 SYSTEM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (04) : 286 - 288

[2] Coughlin J, 1954, B BUREAU MINES

[3] Frommer L, 1928, Z PHYS CHEM-STOCH VE, V137, P201

[4] HUMPHREY, 1952, 4888 US BUR MIN REP

[5] FACTORS DETERMINING THE OXYGEN CONTENT OF LIQUID SILICON AT ITS MELTING POINT [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (09) : 1292 - 1294

[6] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) : 882 - 887

[7] *DIE SILICIUMMONOXYD-DRUCKE UBER DEN FESTEN BODENKORPERN SILICIUM UND SILICIUMDIOXYD [J]. ZEITSCHRIFT FUR ANORGANISCHE CHEMIE, 1950, 263 (5-6): : 261 - 279

[1] DIFFERENTIAL THERMAL ANALYSIS OF THE SI-SIO2 SYSTEM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (04) : 286 - 288

[2] Coughlin J, 1954, B BUREAU MINES

[3] Frommer L, 1928, Z PHYS CHEM-STOCH VE, V137, P201

[4] HUMPHREY, 1952, 4888 US BUR MIN REP

[5] FACTORS DETERMINING THE OXYGEN CONTENT OF LIQUID SILICON AT ITS MELTING POINT [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (09) : 1292 - 1294

[6] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) : 882 - 887

[7] *DIE SILICIUMMONOXYD-DRUCKE UBER DEN FESTEN BODENKORPERN SILICIUM UND SILICIUMDIOXYD [J]. ZEITSCHRIFT FUR ANORGANISCHE CHEMIE, 1950, 263 (5-6): : 261 - 279