GAAS LIGHT-EMITTING-DIODES FABRICATED ON SIO2/SI WAFERS

被引：33

作者：

SHINODA, Y

NISHIOKA, T

OHMACHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 07期

关键词：

D O I：

10.1143/JJAP.22.L450

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L450 / L451

页数：2

相关论文

共 3 条

[1] GALE PR, 1982, APPL PHYS LETT, V41, P545
[2] GE-SEEDED CRYSTALLIZATION ON SIO2 BY USING A SLIDER SYSTEM WITH RF HEATED STRIP HEATER
OHMACHI, Y
NISHIOKA, T
SHINODA, Y
[J]. ELECTRONICS LETTERS, 1983, 19 (08) : 274 - 275
[3] LOW-DISLOCATION-DENSITY GAAS EPILAYERS GROWN ON GE-COATED SI SUBSTRATES BY MEANS OF LATERAL EPITAXIAL OVERGROWTH
TSAUR, BY
MCCLELLAND, RW
FAN, JCC
GALE, RP
SALERNO, JP
VOJAK, BA
BOZLER, CO
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 347 - 349