GE-SEEDED CRYSTALLIZATION ON SIO2 BY USING A SLIDER SYSTEM WITH RF HEATED STRIP HEATER

被引：4

作者：

OHMACHI, Y

NISHIOKA, T

SHINODA, Y

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 08期

关键词：

D O I：

10.1049/el:19830192

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：274 / 275

页数：2

共 10 条

[1] SEEDED OSCILLATORY GROWTH OF SI OVER SIO2 BY CW LASER IRRADIATION [J].

CELLER, GK ;

TRIMBLE, LE ;

NG, KK ;

LEAMY, HJ ;

BAUMGART, H .

APPLIED PHYSICS LETTERS, 1982, 40 (12) :1043-1045

[2]

Fan J. C. C., 1980, International Electron Devices Meeting. Technical Digest

[3] LATERAL EPITAXY BY SEEDED SOLIDIFICATION FOR GROWTH OF SINGLE-CRYSTAL SI FILMS ON INSULATORS [J].

FAN, JCC ;

GEIS, MW ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :365-367

[4] SOLID-PHASE GROWTH OF LARGE ALIGNED GRAINS DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS ON FUSED-SILICA [J].

FAN, JCC ;

ZEIGER, HJ ;

GALE, RP ;

CHAPMAN, RL .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :158-161

[5] SILICON GRAPHOEPITAXY USING A STRIP-HEATER OVEN [J].

GEIS, MW ;

ANTONIADIS, DA ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

SMITH, HI .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :454-456

[6] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J].

LEE, KF ;

GIBBONS, JF ;

SARASWAT, KC .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :173-175

[7] MOSFETS ON SILICON PREPARED BY MOVING MELT ZONE RECRYSTALLIZATION OF ENCAPSULATED POLYCRYSTALLINE SILICON ON AN INSULATING SUBSTRATE [J].

MABY, EW ;

GEIS, MW ;

LECOZ, YL ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

ANTONIADIS, DA .

ELECTRON DEVICE LETTERS, 1981, 2 (10) :241-243

[8]

STURTZ TJ, 1981, APPL PHYS LETT, V39, P498

[9] SI BRIDGING EPITAXY FROM SI WINDOWS ONTO SIO2 BY Q-SWITCHED RUBY-LASER PULSE ANNEALING [J].

TAMURA, M ;

TAMURA, H ;

TOKUYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) :L23-L26

[10] IMPROVED TECHNIQUES FOR GROWTH OF LARGE-AREA SINGLE-CRYSTAL SI SHEETS OVER SIO2 USING LATERAL EPITAXY BY SEEDED SOLIDIFICATION [J].

TSAUR, BY ;

FAN, JCC ;

GEIS, MW ;

SILVERSMITH, DJ ;

MOUNTAIN, RW .

APPLIED PHYSICS LETTERS, 1981, 39 (07) :561-563

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