SEEDED OSCILLATORY GROWTH OF SI OVER SIO2 BY CW LASER IRRADIATION

被引：24

作者：

CELLER, GK

TRIMBLE, LE

NG, KK

LEAMY, HJ

BAUMGART, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 12期

关键词：

D O I：

10.1063/1.92998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1043 / 1045

页数：3

共 11 条

[1]

CELLER GK, 1981, ELECTRON MATER C SAN

[2]

Fastow R. M., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P495

[3] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J].

GAT, A ;

GERZBERG, L ;

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MAGEE, TJ ;

PENG, J ;

HONG, JD .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :775-778

[4] PERIODIC REGROWTH DURING CRYSTAL-GROWTH [J].

JACKSON, KA ;

MILLER, CE .

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[5] SINGLE-CRYSTAL SILICON-ON-OXIDE BY A SCANNING CW LASER-INDUCED LATERAL SEEDING PROCESS [J].

LAM, HW ;

PINIZZOTTO, RF ;

TASCH, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :1981-1986

[6]

LAM HW, 1982, LASER ELECTRON BEAM

[7]

LEAMY HJ, 1982, MATER LETT, V1

[8] MOSFETS ON SILICON PREPARED BY MOVING MELT ZONE RECRYSTALLIZATION OF ENCAPSULATED POLYCRYSTALLINE SILICON ON AN INSULATING SUBSTRATE [J].

MABY, EW ;

GEIS, MW ;

LECOZ, YL ;

SILVERSMITH, DJ ;

MOUNTAIN, RW ;

ANTONIADIS, DA .

ELECTRON DEVICE LETTERS, 1981, 2 (10) :241-243

[9] EFFECTS OF GRAIN-BOUNDARIES ON LASER CRYSTALLIZED POLY-SI MOSFETS [J].

NG, KK ;

CELLER, GK ;

POVILONIS, EI ;

FRYE, RC ;

LEAMY, HJ ;

SZE, SM .

ELECTRON DEVICE LETTERS, 1981, 2 (12) :316-318

[10] DEFECT ETCH FOR (100) SILICON EVALUATION [J].

SCHIMMEL, DG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) :479-483

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