EFFECTS OF GRAIN-BOUNDARIES ON LASER CRYSTALLIZED POLY-SI MOSFETS

[1] LASER-INDUCED CRYSTALLIZATION OF SILICON ISLANDS ON AMORPHOUS SUBSTRATES - MULTILAYER STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 150 - 152

[2] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 71 - 74

[3] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 900 - 902

[4] MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 214 - 216

[5] Lam H. W., 1980, International Electron Devices Meeting. Technical Digest, P559

[6] CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 206 - 208

[7] LAM HW, 1979, INT ELECTRON DEVICES, P213

[8] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175

[9] Lepselter M. P., 1980, International Electron Devices Meeting. Technical Digest, P42

[10] SEEDED AND LIMITED SEEDING REGROWTH OF SI OVER SIO2 BY CW LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1981, 38 (04) : 248 - 250

[1] LASER-INDUCED CRYSTALLIZATION OF SILICON ISLANDS ON AMORPHOUS SUBSTRATES - MULTILAYER STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 150 - 152

[2] CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 71 - 74

[3] GRAIN-BOUNDARIES IN P-N-JUNCTION DIODES FABRICATED IN LASER-RECRYSTALLIZED SILICON THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 900 - 902

[4] MOSFETS IN LASER-RECRYSTALLIZED POLYSILICON ON QUARTZ [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 214 - 216

[5] Lam H. W., 1980, International Electron Devices Meeting. Technical Digest, P559

[6] CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE [J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 206 - 208

[7] LAM HW, 1979, INT ELECTRON DEVICES, P213

[8] THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 173 - 175

[9] Lepselter M. P., 1980, International Electron Devices Meeting. Technical Digest, P42

[10] SEEDED AND LIMITED SEEDING REGROWTH OF SI OVER SIO2 BY CW LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1981, 38 (04) : 248 - 250