THE HETEROEPITAXY OF GE ON SI(100) BY VACUUM EVAPORATION

被引：35

作者：

OHMACHI, Y

NISHIOKA, T

SHINODA, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5466 / 5469

页数：4

共 19 条

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[10] EPITAXIAL-GROWTH OF GE ON LESS-THAN-100 GREATER-THAN SI BY A SIMPLE CHEMICAL VAPOR-DEPOSITION TECHNIQUE [J].

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