GROWTH OF HIGH-QUALITY EPITAXIAL GE FILMS ON (100) SI BY SPUTTER DEPOSITION

被引：33

作者：

BAJOR, G

CADIEN, KC

RAY, MA

GREENE, JE

VIJAYAKUMAR, PS

机构：

[1] ARCO SOLAR INC,CHATSWORTH,CA 91311

[2] UNIV ILLINOIS,DEPT MET,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 08期

关键词：

D O I：

10.1063/1.93239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：696 / 698

页数：3

共 11 条

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
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WEISBERG, LR
BUIOCCHI, CJ
BLANC, J
[J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &
[2] GROWTH OF HIGH-QUALITY EPITAXIAL GAAS FILMS BY SPUTTER DEPOSITION
BARNETT, SA
BAJOR, G
GREENE, JE
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 734 - 737
[3] CAPACITANCE OF P-N HETEROJUNCTIONS INCLUDING EFFECTS OF INTERFACE STATES
DONNELLY, JP
MILNES, AG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 63 - +
[4] DIFFUSION ENHANCEMENT DUE TO LOW-ENERGY ION-BOMBARDMENT DURING SPUTTER ETCHING AND DEPOSITION
ELTOUKHY, AH
GREENE, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4444 - 4452
[5] EPITAXIAL-GROWTH OF IN1-X GAX SB THIN-FILMS BY MULTITARGET RF SPUTTERING
GREENE, JE
WICKERSHAM, CE
ZILKO, JL
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2289 - 2297
[6] GROWTH OF SINGLE-CRYSTAL GAAS AND METASTABLE (GASB)1-XGEX ALLOYS BY SPUTTER DEPOSITION - ION-SURFACE INTERACTION EFFECTS
GREENE, JE
BARNETT, SA
CADIEN, KC
RAY, MA
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 389 - 401
[7] EPITAXIAL-GROWTH OF GE ON LESS-THAN-100 GREATER-THAN SI BY A SIMPLE CHEMICAL VAPOR-DEPOSITION TECHNIQUE
KUECH, TF
MAENPAA, M
LAU, SS
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 245 - 247
[8] MILNES AG, 1972, HETEROJUNCTIONS META, P51
[9] SZE SM, 1969, PHYSICS SEMICONDUCTO, P40
[10] HETEROEPITAXY OF VACUUM-EVAPORATED GE FILMS ON SINGLE-CRYSTAL SI
TSAUR, BY
GEIS, MW
FAN, JCC
GALE, RP
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 779 - 781

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