GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES

[1] HETEROEPITAXY OF GE1-XSIX ON SI BY TRANSIENT HEATING OF GE-COATED SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (11) : 1024 - 1027

[2] DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET [J]. BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03): : 771 - 797

[3] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 169 - 171

[4] GAAS LIGHT-EMITTING-DIODES FABRICATED ON SIO2/SI WAFERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L450 - L451

[5] HETEROEPITAXY OF VACUUM-EVAPORATED GE FILMS ON SINGLE-CRYSTAL SI [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 779 - 781

[6] TSAUR BY, 1982, 16TH P IEEE PHOT SPE, P1143

[1] HETEROEPITAXY OF GE1-XSIX ON SI BY TRANSIENT HEATING OF GE-COATED SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 37 (11) : 1024 - 1027

[2] DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET [J]. BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03): : 771 - 797

[3] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 169 - 171

[4] GAAS LIGHT-EMITTING-DIODES FABRICATED ON SIO2/SI WAFERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L450 - L451

[5] HETEROEPITAXY OF VACUUM-EVAPORATED GE FILMS ON SINGLE-CRYSTAL SI [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 779 - 781

[6] TSAUR BY, 1982, 16TH P IEEE PHOT SPE, P1143