ALGAAS DOUBLE-HETEROSTRUCTURE DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE

被引：88

作者：

WINDHORN, TH

METZE, GM

TSAUR, BY

FAN, JCC

机构：

来源：

关键词：

D O I：

10.1063/1.95273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：309 / 311

页数：3

共 6 条

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CHOI, HK
TSAUR, BY
METZE, GM
TURNER, GW
FAN, JCC
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 207 - 208
[3] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES
GALE, RP
FAN, JCC
TSAUR, BY
TURNER, GW
DAVIS, FM
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (07): : 169 - 171
[4] LARGE AREA ION-BEAM ASSISTED ETCHING OF GAAS WITH HIGH ETCH RATES AND CONTROLLED ANISOTROPY
LINCOLN, GA
GEIS, MW
PANG, S
EFREMOW, NN
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1043 - 1046
[5] GAAS LIGHT-EMITTING-DIODES FABRICATED ON SIO2/SI WAFERS
SHINODA, Y
NISHIOKA, T
OHMACHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L450 - L451
[6] TOMASETTA LR, 1983, P SOC PHOTO-OPT INS, V321, P110