ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：75

作者：

SAKAI, S

SOGA, T

TAKEYASU, M

UMENO, M

机构：

[1] Nagoya Inst of Technology, Nagoya, Jpn, Nagoya Inst of Technology, Nagoya, Jpn

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 06期

关键词：

D O I：

10.1063/1.96515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：413 / 414

页数：2

共 6 条

[1]

AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[2] ALGAAS/GAAS DH-LASERS ON SI SUBSTRATES GROWN USING SUPER LATTICE BUFFER LAYERS BY MOCVD [J].

SAKAI, S ;

SOGA, T ;

TAKEYASU, M ;

UMENO, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L666-L668

[3] CHARACTERIZATION OF EPITAXIALLY GROWN GAAS ON SI SUBSTRATES WITH III-V COMPOUNDS INTERMEDIATE LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SOGA, T ;

HATTORI, S ;

SAKAI, S ;

TAKEYASU, M ;

UMENO, M .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4578-4582

[4]

SOGA T, 1985, 12TH INT S GAAS REL

[5] ALGAAS DOUBLE-HETEROSTRUCTURE DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE [J].

WINDHORN, TH ;

METZE, GM ;

TSAUR, BY ;

FAN, JCC .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :309-311

[6] ROOM-TEMPERATURE OPERATION OF GAAS/ALGAAS DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE [J].

WINDHORN, TH ;

METZE, GM .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1031-1033

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