CHARACTERIZATION OF EPITAXIALLY GROWN GAAS ON SI SUBSTRATES WITH III-V COMPOUNDS INTERMEDIATE LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：72

作者：

SOGA, T ^{[1
]}

HATTORI, S ^{[1
]}

SAKAI, S ^{[1
]}

TAKEYASU, M ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] NAGOYA UNIV,SCH MED,DEPT ENGN SCI,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 10期

关键词：

D O I：

10.1063/1.335363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4578 / 4582

页数：5

共 12 条

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[3] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
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[4] GA(AS,P) STRAINED-LAYER SUPER-LATTICES - A TERNARY SEMICONDUCTOR WITH INDEPENDENTLY ADJUSTABLE BAND-GAP AND LATTICE-CONSTANT
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[5] GROWTH OF HIGH-PURITY GAAS EPILAYERS BY MOCVD AND THEIR APPLICATIONS TO MICROWAVE MESFETS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 255 - 262
[6] STRAINED-LAYER SUPER-LATTICES FROM LATTICE MISMATCHED MATERIALS
OSBOURN, GC
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1586 - 1589
[7] HETEROEPITAXIAL GROWTH OF GAP FILMS ON SI SUBSTRATES
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BROADIE, RW
[J]. JOURNAL OF CRYSTAL GROWTH, 1977, 37 (01) : 13 - 22
[8] HIGH-EFFICIENCY ALGAAS-GAAS CONCENTRATOR SOLAR-CELLS BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
SAXENA, RR
AEBI, V
COOPER, CB
LUDOWISE, MJ
VANDERPLAS, HA
CAIRNS, BR
MALONEY, TJ
BORDEN, PG
GREGORY, PE
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4501 - 4503
[9] GAAS LIGHT-EMITTING-DIODES FABRICATED ON SIO2/SI WAFERS
SHINODA, Y
NISHIOKA, T
OHMACHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L450 - L451
[10] MOCVD GROWTH OF GAAS ON SI SUBSTRATES WITH ALGAP AND STRAINED SUPERLATTICE LAYERS
SOGA, T
HATTORI, S
SAKAI, S
TAKEYASU, M
UMENO, M
[J]. ELECTRONICS LETTERS, 1984, 20 (22) : 916 - 918

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