BARRIER-DISORDER INDUCED EXCITON RELAXATION VIA LO-PHONONS IN GAAS/ALXGA1-XAS MULTIPLE QUANTUM-WELLS

被引：9

作者：

LEDENTSOV, NN

NOTZEL, R

KOPEV, PS

PLOOG, K

机构：

[1] AF IOFFE PHYSICOTECH INST,ST PETERSBURG,USSR

[2] PAUL DRUDE INST FESTKORPERELEKTR,O-1086 BERLIN,GERMANY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1992年 / 55卷 / 06期

关键词：

D O I：

10.1007/BF00331669

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hot exciton relaxation is observed in GaAs/AlxGa1-xAs multiple quantum wells. The photolumnescence excitation spectra of the localized exciton emission at low temperatures and excitation densities are composed of narrow equidistant peaks exactly separated by the GaAs LO-phonon energy (36 meV). The relaxation mechanism via LO-phonons is found to be important for localized excitons in multiple quantum wells with GaAs layer thicknesses of about 50 angstrom, where pronounced alloy fluctuations in the barriers provide a strong additional lateral potential which suppresses the dissociation of hot excitons.

引用

页码：533 / 536

页数：4

共 14 条

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