ULTRATHIN LAYERS AND SHORT-PERIOD SUPERLATTICES IN SEMICONDUCTOR STRUCTURES

被引：8

作者：

IVANOV, SV

KOPEV, PS

LEDENTSOV, NN

MELTSER, BY

NADTOCHY, MY

USTINOV, VM

VASILEV, AM

机构：

[1] A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the Ussr

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 118卷 / 01期

关键词：

D O I：

10.1002/pssa.2211180119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

During the last decade the application of quantum‐size‐effect‐heterostructures to solid state micro‐ and optoelectronics has attracted great attention, because it has made possible to improve drastically the parameters of most known devices and to invent new ones. Results are given of the investigation of the photoluminescence (PL), electroluminescence (EL), and galvanomagnetic properties of MBE‐grown AIIIBV heterostructures with different sequences of ultrathin layers and short‐period superlattices. The influence of introduction of such sequences on device structure characteristics is discussed. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：169 / 177

页数：9

共 29 条

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