EFFECT OF SUBSTRATE TILTING ON MOLECULAR-BEAM EPITAXIAL GROWN ALGAAS/GAAS LASERS HAVING VERY LOW THRESHOLD CURRENT DENSITIES

被引：53

作者：

CHEN, HZ

GHAFFARI, A

MORKOC, H

YARIV, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 25期

关键词：

D O I：

10.1063/1.98958

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2094 / 2096

页数：3

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[1] GROWTH OF AL0.3GA0.7AS BY MOLECULAR-BEAM EPITAXY IN THE FORBIDDEN TEMPERATURE-RANGE USING AS-2
ERICKSON, LP
MATTORD, TJ
PALMBERG, PW
FISCHER, R
MORKOC, H
[J]. ELECTRONICS LETTERS, 1983, 19 (16) : 632 - 633
[2] INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES - EFFECT OF SUBSTRATE-TEMPERATURE DURING GROWTH BY MOLECULAR-BEAM EPITAXY
MORKOC, H
DRUMMOND, TJ
FISCHER, R
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1030 - 1033
[3] INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE MORPHOLOGY OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
MORKOC, H
DRUMMOND, TJ
KOPP, W
FISCHER, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) : 824 - 826
[4] MORKOC H, 1980, ELECTRON LETT, V37, P1933
[5] SINGULAR INSTABILITIES ON LPE GAAS, CVD SI, AND MBE INP GROWTH SURFACES
RODE, DL
WAGNER, WR
SCHUMAKER, NE
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 75 - 78
[6] AI0.3GA0.7AS/GAAS SINGLE QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON MISORIENTED SUBSTRATES
TSUI, RK
KRAMER, GD
CURLESS, JA
PEFFLEY, MS
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (14) : 940 - 942
[7] EFFECTS OF SUBSTRATE MISORIENTATION ON THE PROPERTIES OF (AL, GA)AS GROWN BY MOLECULAR-BEAM EPITAXY
TSUI, RK
CURLESS, JA
KRAMER, GD
PEFFLEY, MS
RODE, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2570 - 2572
[8] WADA O, 1985, ELECTRON LETT, V21, P1205