SINGULAR INSTABILITIES ON LPE GAAS, CVD SI, AND MBE INP GROWTH SURFACES

被引：34

作者：

RODE, DL ^{[1
]}

WAGNER, WR ^{[1
]}

SCHUMAKER, NE ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 02期

关键词：

D O I：

10.1063/1.89293

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：75 / 78

页数：4

共 17 条

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[8] DIFFERENCE BETWEEN (001) FACET AND VICINAL PLANES IN VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS [J].

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[10]

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