4-POINT SHEET RESISTANCE MEASUREMENTS OF SEMICONDUCTOR DOPING UNIFORMITY

[1] PLANAR 4-PROBE TEST STRUCTURE FOR MEASURING BULK RESISTIVITY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) : 968 - 974

[2] BUEHLER MG, 1976, NBS40015 SPEC PUBL, P35

[3] Crossley P. A., 1973, Journal of Electronic Materials, V2, P465

[4] DAVID JM, 1976, NBS40019 SPEC PUBL, P44

[5] DEARNALEY G., 1973, ION IMPLANTATION

[6] HAM WE, 1976, NBS40015 SPEC PUBL, P25

[7] MONOLITHIC 10-B DIGITAL-TO-ANALOG CONVERTER USING ION-IMPLANTATION [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC-8 (06) : 396 - 403

[8] AN AC BRIDGE FOR SEMICONDUCTOR RESISTIVITY MEASUREMENTS USING A 4-POINT PROBE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1961, 40 (03): : 885 - +

[9] 4-POINT PROBE CORRECTION FACTORS FOR USE IN MEASURING LARGE DIAMETER DOPED SEMICONDUCTOR WAFERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) : 1745 - 1750

[10] PERLOFF DS, 1977, SOLID STATE TECHNOL, V20, P31

[1] PLANAR 4-PROBE TEST STRUCTURE FOR MEASURING BULK RESISTIVITY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) : 968 - 974

[2] BUEHLER MG, 1976, NBS40015 SPEC PUBL, P35

[3] Crossley P. A., 1973, Journal of Electronic Materials, V2, P465

[4] DAVID JM, 1976, NBS40019 SPEC PUBL, P44

[5] DEARNALEY G., 1973, ION IMPLANTATION

[6] HAM WE, 1976, NBS40015 SPEC PUBL, P25

[7] MONOLITHIC 10-B DIGITAL-TO-ANALOG CONVERTER USING ION-IMPLANTATION [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC-8 (06) : 396 - 403

[8] AN AC BRIDGE FOR SEMICONDUCTOR RESISTIVITY MEASUREMENTS USING A 4-POINT PROBE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1961, 40 (03): : 885 - +

[9] 4-POINT PROBE CORRECTION FACTORS FOR USE IN MEASURING LARGE DIAMETER DOPED SEMICONDUCTOR WAFERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) : 1745 - 1750

[10] PERLOFF DS, 1977, SOLID STATE TECHNOL, V20, P31