INDIRECT DOPING AS A POSSIBILITY FOR OBTAINING P-TYPE CONDUCTIVITY CDS

被引：4

作者：

DESNICA, UV ^{[1
]}

机构：

[1] RUDJER BOSKOVIC INST, Zagreb, YUGOSLAVIA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1977年 / 39卷 / 01期

关键词：

D O I：

10.1002/pssa.2210390151

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K33 / K36

页数：4

共 13 条

[1]

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[4] DISPLACEMENT OF THE SULFUR ATOM IN CDS BY ELECTRON BOMBARDMENT [J].

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[5] DISPLACEMENT OF CADMIUM ATOM IN SINGLE CRYSTAL CDS BY ELECTRON BOMBARDMENT [J].

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[6]

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[8] PROPERTIES OF ION-IMPLANTED BI IN CDS [J].

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[9] ION IMPLANTATION OF SODIUM, LITHIUM, AND NEON IN CADMIUM SULFIDE [J].

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APPLIED PHYSICS LETTERS, 1970, 17 (08) :315-&

[10] SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J].

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