NONLOCAL THEORY OF THERMAL-CONDUCTIVITY

被引：90

作者：

MAHAN, GD

CLARO, F

机构：

[1] OAK RIDGE NATL LAB, DIV SOLID STATE, OAK RIDGE, TN 37831 USA

[2] PONTIFICIA UNIV CATOLICA CHILE, FAC FIS, SANTIAGO 22, CHILE

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.38.1963

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1963 / 1969

页数：7

共 12 条

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[4] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT
GLASSBRENNER, CJ
SLACK, GA
[J]. PHYSICAL REVIEW, 1964, 134 (4A): : 1058 - +
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[8] Nanosecond resolution time-resolved x-ray study of silicon during pulsed-laser irradiation
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[J]. JOURNAL OF MATERIALS RESEARCH, 1986, 1 (01) : 144 - 154
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