LONG-TERM AND INSTANTANEOUS BURNOUT IN GAAS POWER FETS - MECHANISMS AND SOLUTIONS

[1] Fukui H., 1980, 18th Annual Proceedings of Reliability Physics, P151, DOI 10.1109/IRPS.1980.362932

[2] 4-GHZ 15-W POWER GAAS MESFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 559 - 563

[3] FUKUTA M, 1978, IEEE T MICROWAVE THE, V24, P312

[4] IMPROVEMENT OF DRAIN BREAKDOWN VOLTAGE OF GAAS POWER MESFETS BY A SIMPLE RECESS STRUCTURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 563 - 567

[5] GRIFFITHS JHE, UNPUBLISHED

[6] HWANG JCM, UNPUBLISHED

[7] COMPREHENSIVE REVIEW OF LOGNORMAL FAILURE DISTRIBUTION WITH APPLICATION TO LED RELIABILITY [J]. MICROELECTRONICS AND RELIABILITY, 1978, 18 (03): : 267 - 279

[8] JORDAN AS, 18TH ANN P REL PHYS, P123

[9] THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 161 - &

[10] MORIZANE K, 1978, I PHYS C SER, V45, P287

[1] Fukui H., 1980, 18th Annual Proceedings of Reliability Physics, P151, DOI 10.1109/IRPS.1980.362932

[2] 4-GHZ 15-W POWER GAAS MESFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 559 - 563

[3] FUKUTA M, 1978, IEEE T MICROWAVE THE, V24, P312

[4] IMPROVEMENT OF DRAIN BREAKDOWN VOLTAGE OF GAAS POWER MESFETS BY A SIMPLE RECESS STRUCTURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 563 - 567

[5] GRIFFITHS JHE, UNPUBLISHED

[6] HWANG JCM, UNPUBLISHED

[7] COMPREHENSIVE REVIEW OF LOGNORMAL FAILURE DISTRIBUTION WITH APPLICATION TO LED RELIABILITY [J]. MICROELECTRONICS AND RELIABILITY, 1978, 18 (03): : 267 - 279

[8] JORDAN AS, 18TH ANN P REL PHYS, P123

[9] THERMAL CONDUCTIVITY OF SILICON GERMANIUM 3-5 COMPOUNDS AND 3-5 ALLOYS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (03) : 161 - &

[10] MORIZANE K, 1978, I PHYS C SER, V45, P287