IMPROVEMENT OF DRAIN BREAKDOWN VOLTAGE OF GAAS POWER MESFETS BY A SIMPLE RECESS STRUCTURE

被引：47

作者：

FURUTSUKA, T

TSUJI, T

HASEGAWA, F

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/T-ED.1978.19137

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：563 / 567

页数：5

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